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| SD1222-5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations. PACKAGE STYLE .380 4L FLG B .112 x 45 A FEATURES: * PG = 8.2 dB min. at 5 W/30 MHz * IMD3 = -30 dBc max. at 20 W(PEP) * OmnigoldTM Metalization System * Emitter Ballasting E B C D F E C E O.125 NOM. FULL R J .125 G HI MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 3.0 A 65 V 35 V 4.0 V 30 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 5.83 C/W DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO ICES hFE Cob GP TC = 25 C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCC = 27 V POUT = 20 W IC = 200 mA f = 1.0 MHz f = 136 MHz TA = 125C MINIMUM TYPICAL MAXIMUM 35 65 4.0 1.0 10 5.0 35 35 UNITS V V V mA mA --pF pF A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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